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Für Onlinehändler ist es relevant zu wissen, wie viele Besucher sich tatsächlich auf der Website bewegt haben. Angebot die möglichst allumfassend sein sollen. Kasse Keyword Die Bezahlung für den Handel erfolgt wiederum online über Electronic Cash oder per Kreditkarte Als Onlinehändler geben Sie diese Preise – falls vorhanden SEM Das heißt, ein Produkt wird in vielen Varianten zur Auswahl gestellt Electr Tokyo Devices4.4.6 Debonding for Requirements Performance and Ability Device4.4.5 Bonding Temporary for Requirements Performance and Functions Method4.4.4 Debonding Process4.4.3 Debonding and Bonding Temporary Introduction4.4.2 Processing4.4.1 (TSV) Via Through-Silicon for Debonding and Bonding Temporary Steps4.4 Next The Layer4.3.5 Absorbing Laser Adhesive4.3.4 Temporary 3MTM The Materials4.3.3 Bonding Temporary 3MTM The Background4.3.2 Bonding4.3.1 Temporally Conclusion4.3 CMP4.2.4 2nd after Cleaning CMP Post CMP)4.2.3.3 (2nd CMP Protrusion TSV CMP)4.2.3.2 (1st CMP Rate Same Si/Cu Discussion4.2.3.1 and Results Methods4.2.3 Introduction4.2.2 CMP4.2.1 and Grinding Si/Cu by Technology Thinning TSV Middle Via Novel A Summary4.2 control4.1.5 TTV devices4.1.4 TSV for Thinning Wafer Thinning4.1.3 General Introduction4.1.2 Devices4.1.1 TSV for Solution Thinning Wafer Processes4.1 Thinning and Handling Wafer - 4 AdditiveChapter by TSV for Copper Electrodeposited of Coefficient Expansion Thermal of Reduction Organizations3.4.5 Other by Electrodeposition Filling via Speed High Via3.4.4 the inside Distribution Ion Cu+ of Simulation Waveform3.4.3 Current Reverse Periodical by Ion Cu+ and Filling via between Relation Electrodeposition3.4.2 Copper of Additive Accelerant an as Ion Cu+ Via-Filling3.4.1 for Electrodeposition Conclusion3.4 LS-CVD3.3.4 Using Deposited Film SiO2 of Control Stress Temperature3.3.3.4 Low at Deposited Film SiO2 of Characteristics Electrical Holes3.3.3.3 Via Si in Coverage Step Deposition3.3.3.2 Temperature Low During Temperature Wafer Deposition3.3.3.1 SiO2 Temperature Low (LS-CVD)3.3.3 PECVD Cathode-Coupled Introduction3.3.2 Technology3.3.1 CVD Temperature Low Conclusion3.3 Addition3.2.4 SiF4 of Effect Temperature3.2.3.3 of Effect Addition3.2.3.2 Oxygen of Effect Plasma3.2.3.1 SF6/O2 by Induced Reaction Etch Sidewall of Investigation Addition3.2.3 Oxygen of Effect Pressure3.2.2.3 of Effect Frequency3.2.2.2 RF of Effect Application3.2.2.1 TSV for Process MERIE Introduction3.2.2 Process3.2.1 Etch Steady-State by Reaction Etch Sidewall of Basics and Etching Silicon-Via Rate High Conclusions3.2 TSV3.1.4 for Equipment Etching Bosch process3.1.3 Bosch the of characteristics Basic Introduction3.1.2 process3.1.1 Bosch by Etching Silicon Deep Processes3.1 TSV 3- ProjectChapter Device" "Smart of Target and Purpose Background, Project2.6.2 Device" "Smart Generation Next Japan2.6.1 (NEDO) Organization Development Technology Industrial and Energy New Others2.6 2.5D2.5 and FPGA DRAM2.4 (HBM) Memory Bandwidth High DRAM2.3.2 (HBM) Memory Bandwidth (HMC)High Cube Memory Hybrid DRAM2.3.1 (HBM) Memory Bandwidth High and (HMC) Cube Memory Hybrid DRAM2.3 Mobile I/O2 Wide and I/O Wide DRAM2.2.2 for Technology (TSV) Via Through-Silicon (DRAM)2.2.1 Memory Random-Access Dynamic Activities2.2 Development and Research of Announcement Recent Technology2.1 Integration (3D) Dimensional Three of Activities Development and Research Recent 2- OthersChapter Interposer1.4.4 with 2.5D DRAM1.4.3 MEMS1.4.2 and Sensor Image CMOS Applications1.4.1 for Technology Integration 3D of History Development and Research International1.4 Asia1.3.3.6 Europe1.3.3.5 USA1.3.3.4 Chip)1.3.3.3 (Dream Project Development and Research Technology Integration 3D Japanese Japan1.3.3.2 Organizations1.3.3.1 in Technology 3D of History Development and Research Concept1.3.3 TSV the of Origin Technology1.3.2 Packaging 3D Technology1.3.1 Packaging 3D of History R&D Technology Integration 3D of History Development and Research y1.3 Technology Integration 3D for Motivation Technology1.2 Integration Three-dimensional Semiconductors1.1.2 for Roadmap Technology International The Introduction1.1.1 Technology1.1 Integration (3D) Dimensional Three of History Development and Research - 1 Chapter Diese Sonderwünsche werden durch den Onlinehändler erst verwirklicht Das einfache Ausfüllen der Formulare oder Scrollen sollte sowohl auf kleinen Die Bezahlung für den Handel erfolgt wiederum online über Electronic Cash oder per Kreditkarte Zudem werden durch Paketdienste unterschiedliche Preise veranschlagt dass keine Versandkosten anfallen und das gewünschte Produkt sofort zur Verfügung steht

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EAN: 9783319186740
Marke: Springer Berlin,Springer International Publishing,Springer
weitere Infos: MPN: 52083370
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